ds30172 rev. 7 - 2 1 of 4 mmdt5551 www.diodes.com diodes incorporated mmdt5551 dual npn small signal surface mount transistor epitaxial planar die construction complementary pnp type available (mmdt5401) ideal for medium power amplification and switching ultra-small surface mount package lead free/rohs compliant (note 3) characteristic symbol value unit collector-base voltage v cbo 180 v collector-emitter voltage v ceo 160 v emitter-base voltage v ebo 6.0 v collector current - continuous (note 1) i c 200 ma power dissipation (note 1, 2) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 c/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a m j l d b c h k g f c 1 b 2 e 2 e 1 b 1 c 2 mechanical data case: sot-363 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminals: solderable per mil-std-202, method 208 lead free plating (matte tin finish annealed over alloy 42 leadframe). terminal connections: see diagram marking (see page 2): k4n ordering & date code information: see page 2 weight: 0.006 grams (approx.) sot-363 dim min max a 0.10 0.30 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal f 0.30 0.40 h 1.80 2.20 j 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.25 0 8 all dimensions in mm e 2 b 2 e 1 c 2 b 1 c 1 notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad l ayout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. maximum combined dissipation. 3. no purposefully added lead.
ds30172 rev. 7 - 2 2 of 4 mmdt5551 www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo 180 v i c = 100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 160 v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 6.0 v i e = 10 a, i c = 0 collector cutoff current i cbo 50 na a v cb = 120v, i e = 0 v cb = 120v, i e = 0, t a = 100 c emitter cutoff current i ebo 50 na v eb = 4.0v, i c = 0 on characteristics (note 4) dc current gain h fe 80 80 30 250 i c = 1.0ma, v ce = 5.0v i c = 10ma, v ce = 5.0v i c = 50ma, v ce = 5.0v collector-emitter saturation voltage v ce(sat) 0.15 0.20 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be(sat) 1.0 v i c = 10ma, i b = 1.0ma i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo 6.0 pf v cb = 10v, f = 1.0mhz, i e = 0 small signal current gain h fe 50 250 v ce = 10v, i c = 1.0ma, f = 1.0khz current gain-bandwidth product f t 100 300 mhz v ce = 10v, i c = 10ma, f = 100mhz noise figure nf 8.0 db v ce = 5.0v, i c = 200 a, r s = 1.0k f = 1.0khz ordering information (note 5) device packaging shipping MMDT5551-7-F sot-363 3000/tape & reel notes: 4. short duration test pulse used to minimize self-heating effect. 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. marking information k4n k4n ym ym k4n = product type marking code ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw
ds30172 rev. 7 - 2 3 of 4 mmdt5551 www.diodes.com 0 50 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) fig. 1, max power dissipation vs ambient tem p erature a 100 150 200 0 0.04 0.05 0.06 0.07 0.08 0.09 0 . 1 5 0.14 0.13 0.12 0.11 0.10 1 10 100 1000 v , collector to emitter saturation voltage (v) ce(sat) i , collector current (ma) fig. 2, collector emitter saturation voltage vs. collector current c i c i b =10 t = 150c a t = 25c a t = -50c a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 . 0 0.1 1 10 100 v , base emitter voltage (v) be(on) i , collector current (ma) fig. 4, base emitter voltage vs. collector current c v=5v ce t = 150c a t = 25c a t = -50c a 1 10 1000 100 1 10 100 h , dc current gain (normalized) fe i , collector current (ma) fig. 3, dc current gain vs collector current c v=5v ce t = 150c a t = 25c a t = -50c a 1 10 1000 100 1 10 100 f , gain bandwidth product (mhz) t i , collector current (ma) fig. 5, gain bandwidth product vs. collector current c v=5v ce
ds30172 rev. 7 - 2 4 of 4 mmdt5551 www.diodes.com important notice life support www.diodes.com diodes, inc. and its subsidiaries reserve the right to make changes without further notice to any product herein to make corrections, modifications, enhance- ments, improvements, or other changes. diodes, inc. does not assume any liability arising out of the application or use of any product described herei n; neither does it convey any license under its patent rights, nor the rights of others. the user of products in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on our website, harmless against all damages. the products located on our website at are not recommended for use in life support systems where a failure or malfunction of the component may directly threaten life or cause injury without the express written approval of diodes incorporated.
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